摘要
根据 4H - Si C高饱和电子漂移速度和常温下杂质不完全离化的特点 ,对适用于 Si和 Ga As MESFET的直流I- V特性理论进行了分析与修正 .采用高场下载流子速度饱和理论 ,以双曲正切函数作为表征 I- V特性的函数关系 ,建立了室温条件下 4H - Si C射频功率 MESFET直流 I- V特性的准解析模型 ,适于描述短沟道微波段 4H- Si CMESFET的大信号非线性特性 ,计算结果与实验数据有很好的一致性 .同时与 MEDICI模拟器的模拟结果也进行了比较 .
Based on the characteristics of the incomplete impurity ionization and the higher saturated electron drift velocity of 4H-SiC,a quasi-analytical model of DC I-V characteristics at room temperature for 4H-SiC RF power MESFET is proposed,with the empirical hyperbolic tangent description and the theory of carrier saturated-velocity under a high field.It can describe the large-signal nonlinear characterictics of short channel microwave SiC MESFET's.The simulation and measurement results are in excellent agreement with each other.
基金
国防预研基金资助项目 ( 8.1.7.3)~~
