GaAs、AlAs、DBR反应离子刻蚀速率的研究

Research on Etch Rate of Reactive Ion Etching of GaAs,AlAs and DBR

采用 BCl3和 Ar作为刻蚀气体对 Ga As、Al As、DBR反应离子刻蚀的速率进行了研究 ,通过控制反应的压强、功率、气体流量和气体组分达到对刻蚀速率的控制 .实验结果表明 :在同样条件下 Ga As刻蚀的速率高于 DBR和 Al As,在一定条件下 Ga As刻蚀的刻蚀速率可达 40 0 nm/m in,Al As的刻蚀速率可达 35 0 nm/min,DBR的刻蚀速率可达 340 nm/min,刻蚀后能够具有光滑的形貌 ,同时能够形成陡直的侧墙 ,侧墙的角度可达 85°.

The reactive ion etching of GaAs,AlAs and DBR are developed by using a gas mixture of BCl 3 and Ar.Controlling the process parameters such as total gas flow,radio-frequency power,pressure and gas flow ratio,the etching rate can be controlled.The experiments indicate that under the same condition,the etching rate of GaAs is higher than those of AlAs and DBR.In the experiments,the etching rates of GaAs,AlAs and DBR can reach 400,350 and 340nm/min,respectively.Meanwhile by changing reactive parameters,smooth enchant profiles can be obtained and the gradient of the side-wall can reach 85°.