摘要
利用光致发光谱 (PL)和二次离子质谱 (SIMS)检测了不同退火条件下处理的 SIMOX材料的顶层硅膜 .实验结果显示 ,SIMOX顶层硅膜的 PL 谱有三个峰 :它们是能量为 1.10 e V的 a峰、能量为 0 .77e V的 b峰和能量为0 .75 e V的 c峰 .与 RBS谱相比 ,发现 a峰峰高及 b/ a峰值比是衡量顶层硅膜单晶完整性的标度 .谱峰 b起源于SIMOX材料顶层硅膜中残余氧 ,起施主作用 .SIMS测试结果显示 ,谱峰 c来源于 SIMOX材料顶层硅膜中的碳和氮 .
The crystallization of the top Si layer in SIMOX,especia ll y the behavior of residual oxygen in the top Si layer,is investigated by means o f PL and SIMS,with the sample of P type(100) Si.The results show that there are three peaks in the PL,they are: a peak located at 1 10eV , b peak located at 0 77eV and c peak located at 0 75eV.Comparing with RBS measurement re sults,it is found that the amplitude of the intrinsic peak a in PL and the a mplitude ratio of b peak to a peak are the estimation of crystal perfect ion of the top Si layer of SIMOX wafer.The SIMS results show that the amplitude of b peak is affected by the amount of residual oxygen in the top Si layer of a sample.Peak b is assumed to or iginate from the implantation of oxygen ions and high temperature annealing of S IMOX wafer,which is similar to the phosphorus donor level and plays an important role in making N-type to Si layer of SIMOX from P-type substrate. Meanwhile t he amplitude of c peak depends on the content of nitrogen and carbon in the top Si layer of SIMOX wafer.
基金
高等学校重点实验室访问学者基金资助
