摘要
用二次离子质谱、剖面透射电镜、高分辨电镜以及化学增强腐蚀法表征了低剂量 SIMOX圆片的结构特征 .结果显示 ,选择恰当的剂量能量窗口 ,低剂量 SIMOX圆片表层 Si单晶质量好、线缺陷密度低埋层厚度均匀、埋层硅岛密度低且硅 /二氧化硅界面陡峭 .这些研究表明 ,低剂量 SIMOX圆片制备是很有前途的
The structure of low dose SIMOX wafers is characterized by SIMIS,XTEM,HRTEM and Secco.The results indicate that low dose S IMOX wafers have good superficial silicon layer with low threading dislocation d ensity,uniform BOX with low silicon island density and a sharp Si/SiO 2 interf ace.It suggests that the low dose is one of the most promising SIMOX synthesis t echnologies.
基金
国家自然科学基金资助项目 (No.5 992 5 2 0 5 )
关键词
低剂量
线缺陷密度
SIMOX
SOI
集成电路
low dose
silicon island density
Si/SiO 2 int erface
threading dislocation density
