Si光电器件表面减反膜设计的数值分析

Numerical Analysis of Designing Antireflective Coating on the Surface of Si Optoelectric Devices

本文通过计算、分析在 Si光电器件表面由 Si O2 、Si3N4及 Al2 O3组成的不同减反膜的反射损耗 ,得出了最优化的膜层组合。厚度为 95 nm的 Si O2 层是最佳的单层减反膜 ;进一步的优化可采用 40 nmSi3N4和 40 nm Si O2 或 45 nm Al2 O3和 45 nm Si O2 组成的 2层结构 ;3层或 3层以上结构的反射损耗呈振荡性变化 。

Through computing and analysing reflection losses of various antireflective coatings consisting of SiO2, Si3N4 or Al2O3 on the surface of Si optoelectric devices, the optimum data can be obtained. It has been found that SiO2 layer of 95 nm thick will be the optimum if single layer is used. Further improvements can be achieved by using a combination of 40 nm Si3N4 and 40 nm SiO2 or 45 nm Al2O3 and 45 nm SiO2. Reflection loss would be vibrational if more than two layers are used, therefore this structure is not preferred.