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助熔剂法生长的PLZST单晶的缺陷研究 被引量:4

Research on the Defects of PLZST Single Crystal Grown by Flux Method
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摘要 本文介绍了助熔剂缓慢降温自发成核法生长的稀土掺杂锆钛锡酸铅镧 (PLZST)晶体中出现的几种缺陷 :包裹体、开裂、位错、枝晶 ,分析了这些缺陷的形成机理并提出了减少和消除这些缺陷的一些措施。 The defects such as inclusion,splitting,dislocation and dendrite in the Pb x La 1- x (Zr y Ti z Sn 1- y-z )O 3(PLZST) single crystal grown from PbO-PbF 2 flux by the slow cooling self seeding technique were discussed in this paper.The forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2001年第2期211-215,共5页 Journal of Synthetic Crystals
基金 国家重点自然科学基金资助项目 (No .5 9972 0 2 5 )
关键词 PLZST单晶 晶体生长 助熔剂法 缺陷 自发成核法 PLZST single crystal crystal growth flux method defects
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二级参考文献3

  • 1Yang P,J Appl Phys,1992年,71卷,1361页
  • 2Pan W Y,J Appl Phys,1989年,66卷,6014页
  • 3刘鹏,科学通报

共引文献4

同被引文献20

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