LCVD制备多晶硅膜实验研究

An Experimental Study of Polysilicon by LCDV

用CWCO_2激光诱发SiH_4反应,在石英基片上淀积多晶硅膜,它的Raman谱表明,激光诱发反应时间越长,结晶度越高.SEM 结果表明,不同淀积时间,表面结构差异较大.薄厚台阶仪测出不同实验条件淀积速率变化的规律.同时,结合不同条件下控制过程的反应机制,对结果进行了定性的讨论.

A polysilicon film has been successfully deposited on a quartz substrate with thereaction of SiH_4 decomposition induced by a CW CO_2 laser.Its Raman shift indicatesthat the crystallite size increases when the inducing reaction lasts.An SEM surfaceanalysis shows that the surface structure varies with the increase of the deposition time.The law of variation governing the deposition rates under different experimentalconditons was discovered by surface profile measurement.Besides,all the experimentalresults have been quantatively discussed with the reaction mechanisms in the control-ling process under different conditions.