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2Hofmann J, Veprek S, Heind J. Pseudomorphic Growth of Ultrathin Cubic 3C-SiC Films on Si (100) by Temperature Programmed Organometallic Chemical Vapor Deposition. Applied Physics Letters, 1999, 85 (5) : 2652 - 2656.
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6Hatayama T,Tanaka N,Fuyuki T,et al.Initial Stage for Heteroepitaxy of 3C-SiC on the Si(100) Surface in Dimethylgermance Source Molecular Beam Epitaxy.Applied Physics Letter,1997,70 (11):1411～1147.
7Hofmann J,Veprek S,Heind J.Pseudomorphic Growth of Ultrathin Cubic 3C-SiC Films on Si(100) by Temperature Programmed Organometallic Chemical Vapor Deposition.Applied Physics Letter,1999,85 (5):2652～2656.
8Benso A,Carlo S D,Natal G D.Static Analysis of SEU Effect on Software Application.ITC International Test Conference,2002.
9Hatayama T, Tanaka N, Fnyuki Tet al. Initial Stage for Heteroepitaxy of 3C-SiC on the Si(100) Surface in Dimethylgermance Source Molecular Beam Epitaxy. Applied Physics Letter, 1997, 70( 11 ) : 1411-1147.
10Hofmann J, Veprek S, Heind J. Pseudomorphic Growth of Ultrathin Cubic 3C-SiC Films on Si(100) by Temperature Pro- ~rammed Organometallic Chemical Vapor Deposition. Applied Physics Letter, 1999, 85 (5) : 2652-2656.
