磁阻效应增强型锑化铟红外光电传感器

A Indium Antimonide IR-photoelectric Sensor Enhanced by Magnetoresistance

发现锑化铟一铟共晶体磁阻元件被置于偏磁系统后 ,对脉冲变化的红外光的照射 ,它的输出信号增强了。采用灵敏度 K1=3 .6 ,K2 =1 .0 2 (B=0 .3 T)的两个磁阻元件 ,在 B=0 .1 5～ 0 .2 T偏磁系统中 ,用峰值波长 λp=940 nm的红外光脉冲照射 ,可使输出电压比没有偏磁时增大 3倍以上 ,输出信号电压 (S)与本底噪声电压 (N)之比为 2 5∶ 1 (S/N=2 8db)。

It is discovered that the output signal level is enhaneed from the InSb magnetoresistors laid in a magnetic field under IR irradiating.A result is obtained that the output voltage is enhanced more than 3 times and its signal-to-noise ratio (S/N) is 28dB under the conditions that two magnetoresistors with sensitivity K 1=3.6 and k 2=1.02(B=0.3T) lay in a magnetic field B=0.15～0.2T under λ p=940nm IR irradiating.