Ge_xC_(1-x)非均匀增透保护膜系的设计和制备

Design and Preparation of Ge_xC_(1-x) Inhomogeneous Antireflective and Protective Films

用射频磁控反应溅射法 (RS)制备出 Gex C1-x薄膜 ,其折射率可以在 1 .7～ 4.0之间变化。设计出单层 Gex C1-x非均匀增透保护膜和含有 Gex C1-x非均匀膜的多层增透保护膜系 ,并在 Zn S基片上制备出 Gex C1-x单层非均匀增透保护膜。设计和实验结果表明 ,Zn S衬底上制备的非均匀膜实现了宽波段的增透 ,在 5 0 0 0～ 85 0 cm-1波数范围内 ,平均透过率从 6 7.1 9%提高到 78.70 % ,比未镀膜净增加 1 1 .5 1 %。

Ge xC 1-x films were prepared by reactive radio frequency magnetron sputtering.Its refractive index can be varied between 1.7～4.0.Antireflective and protective films were designed,which constructed by one layer of inhomogeneous Ge xC 1-x films or by two layers containing one layer of inhomogeneous Ge xC 1-x films.One layer of inhomogeneous Ge xC 1-x antireflective and protective films were also prepared on ZnS substrate.The design and experiment results show that the average transmittance (5000～850cm -1 )of ZnS coated with one layer of inhomogeneous antireflective Ge xC 1-x films on one side can reach 78.70%,increased 11.51% than uncoated ZnS sample with 67.19% in average transmittance.