摘要
文章首先给出了同质结双极晶体管和异质结双极晶体管 (HBT)在材料结构参数上的差异 .这种差异表明 ,在器件的材料结构设计上已从掺杂设计步入到了能带工程设计 .和同质结双极晶体管相比 ,HBT具有更优越的性能 .接着介绍了HBT的工作原理。
The differences between the material structural parameters of a homojunction bipolar transistor and those of a heterojunction bipolar transistor (HBT) are discussed briefly. It is shown that doping design for the device′s material structure has evolved into band engineering design. In comparison to a homojunction bipolar transistor, the HBT offers superior performance. The principle of operation, typical material structures and HBT fabrication procedures will be described.
出处
《物理》
CAS
北大核心
2001年第6期372-379,共8页
Physics
