MIM开关器件的伏安特性研究

THE SWITCHING CHARACTERISTICS OF THE MIM ELEMENT

研究了ＭＩＭ器件的电导机制，详细介绍了新提出的ＭＩＭ器件的ｐ－ｎ－－ｎ能带模型，同时利用这一能带模型解释并验证了上电极材料的选择、下电极材料掺Ｎ以及用溅射Ｔａ２Ｏ５膜代替阳极氧化Ｔａ２Ｏ５膜作绝缘层对ＭＩＭ器件伏安特性曲线对称性的影响。利用ｐ－ｎ－－ｎ能带模型首次提出用在氢气气氛下热处理的阳极氧化Ｔａ２Ｏ５膜作ＭＩＭ器件的绝缘层可以提高器件的Ｉ－Ｖ特性曲线的对称性这一新的实验方法。另外，本文还较为详细地讨论了阳极氧化过程对ＭＩＭ器件特性的影响，并首次讨论了对阳极氧化Ｔａ２Ｏ５膜进行热处理时，退火方式和反应室气压变化对ＭＩＭ器件Ｉ－Ｖ特性的影响。

お? The conductive mechanism of the MIM element is studied and a new p-n--n band model is presented in detail Meanwhile, the effect of the selection of the top-electrode, the bottom-electrode with the doping N, use of the sputtered Ta2O5 film instead of the anodic Ta2O5 film on the I-V characteristics of the MIM element is interpreted by using the p-n--n band model The symmetry of I-V characteristics of the MIM element with the hydrogen-treated Ta2O5 as insulator is improved On the other hand, the effect of the anodic oxidation process, annealing method and the pressure in the reactive tube on the characteristics of the MIM element is discussed in detail