摘要
BPS研制出一种用于PDP应用的新型高速MgO溅射源。该溅射源与现有的用于大批量生产的立式串级系统完全兼容。工艺过程是基于在金属镁靶上进行的全反应。此装置采用特殊设计,可解决低附着率以及由于靶电弧所引起的工艺不稳定等问题。本文还进一步讨论了表面拓朴学,溅射阻力以及其它有影响的参数。
お new high rate MgO sputtering source for PDP applications has been developed by BPS. The source is fully compatible with existing vertical In-Line systems for high volume production.The process is operated fully reactive from a metallic Mg target. By some special design features the problems of a low deposition rate and process instabilities caused by target arcing could be overcome.Furthermore the surface topology, the resistance to sputtering and the influencing parameters are discussed.
出处
《液晶与显示》
CAS
CSCD
1998年第2期132-135,共4页
Chinese Journal of Liquid Crystals and Displays