摘要
应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP SiO2 复合薄膜 ,并在几种条件下对这些薄膜进行退火 .X射线光电子能谱和卢瑟福背散射实验结果表明 ,复合薄膜中InP和SiO2 的化学组分都大体上符合化学计量配比 .X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒 .磷气氛保护下的高温(5 2 0℃ )退火可以消除复合薄膜中残存的In和In2 O3 并得到了纯InP SiO2 纳米复合薄膜 .
InP/SiO2 composite thin films have been deposited on hot substrates of slice of silica glass and polished silicon by a radio frequency magnetron co-sputtering technique, and annealing under several conditions. Detailed analysis of the composition of the films by X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy shows that the InP and SiO2 exist in normal stoichiometry as a whole. X-ray diffraction patterns and Raman spectra of the films conform the presence of InP nanocrystals in the composite films. Very small amounts of extra indium and In2O3 have been removed and pure InP/SiO2 nanocomposite films have been obtained by annealing at high temperature (520 degreesC) in over-pressure of phosphorous vapor. Blue shifts of optical absorption spectra and great enhancement of optical nonlinearity of the films at room temperature have been observed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第8期1574-1579,共6页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :6 980 6 0 0 8)
广东省自然科学基金(批准号 :970 716 )
中山大学超快速激光光谱学国家重点实验室开放课
