HgCdTe分子束外延In掺杂研究

INDIUM DOPING ON MBE GROWN HgCdTe

报道了用 MBE方法生长掺 In的 n型 Hg Cd Te材料的研究结果 .发现 In作为 n型施主在 Hg Cd Te中电学激活率接近 10 0 % ,其施主电离激活能至少小于 0 .6 m e V.确认了在制备红外焦平面探测器时有必要将掺杂浓度控制在～ 3× 10 1 5 cm- 3水平 .比较了高温退火前后 In在 Hg Cd Te中的扩散行为 ,得出在 40 0℃温度下 In的扩散系数约为10 - 1 4 cm2 / s,并确认了 In原子作为 Hg Cd Te材料的 n型掺杂剂的可用性和有效性 .

The results of indium doping on MBE grown HgCdTe were described. It was found that the indium electrical activation was close to 100% in HgCdTe and the donor activation energy was at least smaller than 0.6 meV. It was confirmed that a donor concentration of similar to3 X 10(15)cm(-3) was necessarily preserved for infrared FPAs applications. The diffusion behavior of indium was studied by thermal annealing, and a diffusion coefficient of similar to 10(-14) cm(2)/sec at 400C was obtained, which confirms the feasibility and validity of indium as an n-type dopant.