期刊文献+

Cd_(1-x)Zn_xTe(x=0.04)表面处理的低温拉曼散射和电学特性研究 被引量:1

LOW-TEMPERATURE RAMAN SCATTERING SPECTRA AND ELECTRICAL PROPERTIES OF Cd_(1-x) Zn_xTe(x=0.04) OF DIFFERENT SURFACE TREATMENTS
下载PDF
导出
摘要 测量了几种不同处理的 Cd1 - x Znx Te(x=0 .0 4)表面的傅里叶变换拉曼散射光谱和电流 -电压 (I- V)特性 .通过分析拉曼光谱反 Stokes分量 ,并与表面 I- V特性进行比较 ,结果表明与表面处理相联系的晶格声子的行为反映了表面完整性的变化 ,Te沉淀是影响表面质量的关键因素 ,并对有关表面处理方法的实际应用进行了讨论 . Fourier transform Raman scattering spectra and current-voltage (I-V) features were measured for Cd1-x ZnxTe(x = 0.04) surfaces of different treatments. By analyzing the anti-stokes Raman spectra and comparing with surface current-voltage (I-V) curves, it was concluded that the behavior of the lattice phonons which are associated with surface treatments reflects the perfection-variation of Cd1-xZnxTe(x = 0.04) surface. It was also found that Te precipitates on Cd1-xZnxTe(x = 0.04) surface are crucial to surface quality. In addition, potential application of the different surface treatments was discussed.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2001年第3期184-188,共5页 Journal of Infrared and Millimeter Waves
基金 国家自然科学基金 (编号 1980 5 0 14 )资助项目&&
关键词 Cd1-xZnxTe 表面处理 拉曼散射光谱 I-V特性 电学特性 红外光电探测器 材料 Cd1-xZnxTe surface treatment Raman scattering spectrum I-V feature
  • 相关文献

参考文献1

二级参考文献2

同被引文献15

  • 1黄晖,潘顺臣.碲锌镉晶片退火的显微Raman光谱分析[J].红外技术,2004,26(5):37-39. 被引量:6
  • 2黄晖,潘顺臣.碲锌镉(Cd_(1-y)Zn_yTe)晶体Zn组分的显微荧光光谱研究[J].光谱学与光谱分析,2005,25(7):1099-1102. 被引量:4
  • 3Doty F P,Butler L F,Apotovsky B.Gamma-and X-ray Detectors Manufactured from CZT Grown by a High Pressure Bridgman Method[J].Materials Science and Engineering B,1993,16:290-295.
  • 4Sochinskii N V,Serrano M D,Dieguez E,et al.Effect of Thermal Annealing on Te Precipitates in CdTe Wafers Studied by Raman Scattering and Cathodoluminescence[J].Journal of Applied Physics,1995,77(6):2806-2808.
  • 5Rai B K,Bist H D,Katiya R S,et al.Controlled Micro Oxidation of CdTe Surface by Laser Irradiation:A Micro-spectroscopic Study[J].Journal of Applied Physics,1996,80(1):477-481.
  • 6Sochinskii N V,Serrano M D,Diéguez E,et al.Effect of Thermal Annealing on Te Precipitates in CdTe Wafers Studied by Raman Scattering and Cathodoluminescence[J].Journal of Applied Physics,1995,77:2806-2808.
  • 7Brajesh K R,Bist H D,Katiyar R S,et al.Controlled Micro Oxidation of CdTe Surface by Laser Irradiation:A Micro-spectroscopic Study[J].Journal of Applied Physics,1996,80(1):477-481.
  • 8Miller J A,Melissa G M,Levy M,et al.Characterization of CdTe Substrates and MOCVD Cd1-xZnxTe Epilayers by Raman,Photoluminescence and X-ray Diffraction Techniques[J].Journal of Crystal Growth,1998,187(3):367-372.
  • 9Tiong K K,Amirtharaj P M,Pollak F H.Effects of As^+ Ion Implantation on the Raman Spectra of GaAs:"Spatial Correlation"Interpretation[J].Applied Physics Letters,1984,45:789.
  • 10Rai B K,Katiyar R S,Chen K T,et al.Raman Scattering Study of H2O2-etched Cd0.9Zn0.1Te Surface[J].Mat.Res.Soc.Symp.Proc.,1996,450:287-292.

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部