GaAs/AlGaAs多量子阱结构的光电流与电子干涉

PHOTOCURRENT AND ELECTRON INTERFERENCE OF GaAs/AlGaAs MULTIQUANTUM WELL STRUCTURE

在 77K温度 ,测量了 Ga As/ Al Ga As多量子阱结构的光电流 ,观测到在ν=15 89cm- 1 ,即λ=6 .2 9μm附近存在一个强电流峰 ,分析认为 ,该电流峰与多量子阱势垒以上的电子干涉有关 .

Photocurrent spectrum for GaAs/AlGaAs multiquantum well structure was measured at 77K. A strong photocurrent peak at nu = 1589cm(-1),i. e. lambda= 6. 29 mum,in the photocurrent spectrum was observed. It was believed that the strong photocurrent peak is relevant to the interference of electrons above the barrier of multiquantum well structure. The calculated position of peak of photocurrent on the basis of theory of electron interference is in very good agreement with the experimental results.