气氛加压烧成氮化硅基材料中抑制ZrN生成的研究

Inhibit the Formation of ZrN During the Sintering of Silicon Nitride Base Material under Gases Pressure

本文系统研究了烧成温度、氮气压力、埋粉组成及Z值对GPS ZrO_2-Sialon系统中ZrN生成的影响,结果显示:通过加入有效烧结助剂(Al_2O_3+AlN),采用较低的烧成温度,增加埋粉中SiO分压及保护气氛氮气压力等工艺措施可有效地抑制ZrN的生成,X射线分析表明:添加15%ZrO_2的Sialon(Z=1)复合材料在1750℃,氮气压力1 MPa,埋粉组成为Si_3N_4+BN+SiO_2的条件下烧结,试样表面无ZrN生成。

The influence of sintering temperature, nitrogen pressure, buried powder material and Z value on the formation of ZrN in GPS ZrO_2-Sialon system are studied systematically in this paper. The result shows that the formation of ZrN can be efficaciously inhibited by means of adding effective sintering aid (Al_2O_3+AIN), lowering sntering temperature, increasing differential pressure of SiO in buried powder increasing nitrogen pressure and etc. XRD analysis shows that ZrN was not formed on the surface of the sample when the sintering of Sialon (z=1) composite material with 15% ZrO_2 under Tempercture 1750℃, N_2 pressure 1MPa and the buried powder composition Si_3N_4+BN+SiO_2.