摘要
在有机功能纳米薄膜上通过扫描隧道显微技术实现了超高密度的信息存储 ,存储点的大小在 1 3nm左右 ,存储点间距为 1 5nm ,相应的存储密度为 10 1 3bits cm2 .实验与理论计算的结果表明 ,其存储机理是薄膜的导电性质的变化 .
Ultrahigh density data storage on organic thin films at a nanometer scale has been successfully obtained by scanning tunneling microcopy. The recorded mark is about 1^3nm in diameter. The shortest distance between the marks is about 1^5nm, corresponding to a data density of 10+{13}bits/cm+2. The recording mechanism can be attributed to the conductance transition from high to low impedance.
出处
《物理》
CAS
北大核心
2001年第8期453-455,共3页
Physics
基金
国家自然科学基金 (批准号 :69890 2 2 3)资助项目
