摘要
本研究用CM12型透射电镜配备的PV9100X射线能谱,对SiCw/6061Al复合材料中碳化硅晶须和相邻铝基体之间界而区域的铝、硅二元素的相对含量进行了测试;并利用JCXA733电子探针设备,测试了由复合材料溶下的碳化硅晶须中铝、硅二元素的相对含量。测试结果表明:铝元素没有向碳化硅晶须中扩散。虽然在碳化硅晶须表层大约50nm范围内存在铝元素的浓度梯度变化,但是否由扩散所致,尚需进一步探讨。
The elemental distribution of the SiC-Al interface in a SiCw/6061Al composite was measured by means of CM12S TEM equipted with PV9100 EDS, and the content of Al and Si in the SiCW/6061Al composite was also measured by JCXA733 EPMA, The experimental results show that there is no diffusion of Al into the SiC whisker, Although a certain amount of Al is distibutd on the surface of the SiC whisker in the range of 50nm, it is not sure whether it is resulted from the elemental distribution.
关键词
碳化硅
晶须
复合材料
Silicon carbide
whisker
composite
interface
