薄栅氧化层经时击穿的实验分析及物理模型研究

EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE

通过衬底热载流子注入技术 ,对薄SiO2 层击穿特性进行了研究 .与通常的F N应力实验相比较 ,热载流子导致的薄栅氧化层击穿显示了不同的击穿特性 .通过计算注入到氧化层中的电子能量和硅衬底的电场的关系表明 ,热电子注入和F N隧穿的不同可以用氧化层中电子的平均能量来解释 .热空穴注入的实验结果表明薄栅氧化层的击穿不仅由注入的空穴数量决定 .

Breakdown character of thin SiO2 is investigated by using substrate hot-carrier injection techniques. Hot-carrier induced thin gate oxide damaged shows different breakdown character compared with the case of conventional F-N tunneling experiments. Good correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate suggests that the difference between hot-electron injection and the F-N tunneling can be explained in terms of the average electron energy in the oxide. Hot holes injection experiments reveal that the life of oxide breakdown is not simply determined by the total number of injected holes. New hot-carrier-induced TDDB (Time-dependent dielectric breakdown) models of thin gate oxide are reported in this paper.