有机纳米信息存储中的结构转变

STRUCTURAL TRANSITION IN ORGANIC THIN FILMS FOR NANOMETER SCALE DATA RECORDING

采用真空热蒸发方法制备了有机单体薄膜对硝基苯腈p nitrobenzonitrile (PNBN) .利用扫描隧道显微镜 (STM)在PNBN薄膜上进行信息记录点的写入 ,通过在STM针尖和高定向裂解石墨 (HOPG)之间施加电压脉冲 ,直接观察到了信息记录点写入前后薄膜发生的局域结构转变 .信息记录点的写入机制主要是这种纳米范围结构变化所导致的薄膜由高阻态向低阻态转变 ,高阻态对应 0 ,低阻态对应 1.

Nanometer scale data recording has been achieved on p-nitrobenzonitrile thin films using scanning tunneling microscopy. When a series of voltage pulse is applied between the STM tip and the highly ordered pyrolytic graphite substrate, structural transition at molecular scale has been observed directly for PNBN thin films. The recording mechanism is attributed to local structural transition at molecular scale, i.e., from a crystalline state to a disordered one. The former corresponds to a high electrical resistance,and the latter to a low resistance.