摘要
本文利用电子衍射和矩阵分析方法探讨了析出V_4C_3在马氏体相变中的遗传现象。结果表明,奥氏体、马氏体和V_4C_3三相间的晶体学取向关系为: (010)_A∥(110)_M∥(010)_(V_4C_3) [101]_A∥[111]_M∥[101]_(V_4C_3)V_4C_3首先在奥氏体中析出,遗传至马氏体中后,虽能与马氏体保持一定的取向关系,但界面结构理论分析指出,两相间的界面结合能高于Baker-Nutting关系所规定的结合能,因而是一五稳态。由于V_4C_3沿奥氏体的晶体缺陷析出,故这些缺陷将遗传至马氏体中。
The inheritance phenomenon of precipitated V_4C_3 in martensitic transformation has been investigated by means of electron diffraction and matrix analysis. A crystallographic orientation relation among austenite, martensite and V_4C_3 carbide was found to be: (010)_A//(110)_M//(010)_(V_4C_3) [101]_A//[111]_M//[101]_(V_4C_3) The V_4C_3 first precipitated in austenite, and then was inherited to martensite. Although ertain orientation relation was kept between V_4C_3 and martensite, the interfacial structural analysis pointed out that the biphase interfacial energy is higher than that determined by Baker-Nutting relation, thus it is metastable. Because the V_4C_3 precipitated along the crystalline defects in austenite, they could be inherited to martensite.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1991年第5期A330-A336,共7页
Acta Metallurgica Sinica
关键词
马氏体
相变
V4C3
析出
遗传
V_4C_3
transformation
inheritance
orientation
