多孔硅镍钝化处理的光致发光谱研究

Study on the Photoluminescence Spectrum of Nickel Passivation Treatment of Porous Silicon

报道了对多孔硅在NiCl2 中电解钝化处理的一种新方法。观测了经不同时间处理后多孔硅的光致发光谱 ,其光谱表明 ,恰当的处理条件 ,可使峰值强度增大约 2 5倍 ,峰值波长蓝移 33nm。分析了现象发生的原因是由于多孔硅表面的SiHx 中的H被Ni替换成SiNix 的结果。

A new method for electrolysis passivation treatment of porous silicom (PS) in NiCl2 is reported in this paper. The photoluminescence (PL) spectra of PS treated in different time is observed, the spectra show that peak intensity is 2.5 times stronger than that without treatment, peak wavelength is 33 nm blue shift when PS is treated properly. The phenomenon caused is that the results of the SiHx change into SiNx when replaced H by Ni on surface of PS.