摘要
简要介绍了脉冲激光薄膜沉积 (PLD)技术的物理原理、独具的特点 ,并且介绍了在PLD基础上结合分子束外延 (MBE)特点发展起来的激光分子束外延 (L -MBE) ,以及采用L
Pulsed laser deposition(PLD) is a new technique for the growth of thin films. In this paper, physical principle and unique characteristics of PLD are introduced briefly. In addition, Laser Molecular Beam Epitaxy (L MBE) combining the characteristics of PLD and MBE is presented. Test results of PtSi nanometer thin film based on silicon prepared by L MBE are given.
出处
《宇航材料工艺》
CAS
CSCD
北大核心
2001年第4期1-4,48,共5页
Aerospace Materials & Technology
基金
国防科技预研跨行业综合技术项目 :18.9.2
