Si-Ge异质结基区混合模式晶体管的提出和模拟

Proposal and Simulation of Si-Ge Heteroj unction Base Hybrid Mode Transistor

在常规混合模式晶体管的基础上提出一种新结构的器件—— Si- Ge异质结基区混合模式晶体管。由于基区采用禁带宽度较窄的 Si- Ge合金材料 ,引起空穴向发射区反注入势垒的提高 ,使 IB空穴电流减小 ,从而提高了注入效率 ;迁移率增高 ,从而提高特征频率。因而这种器件具有 β高、基区电阻低、基区渡越时间短等优点。通过器件模拟证实了该器件具有输出电流大、低温放大倍数极高、常温放大倍数较高、特征频率高等优点 ,是下一代

A new kind of dev ice, Si-Ge heterojunction base hybrid mo de transistor, based on the conventional hybrid mode transistor, is proposed. Si nce its base region adopts Si-Ge alloy w hose forbidd en band is more narrow, the barrier of t he hole injecting from base region to em itter region increases and the hole curr ent decreases so that the injecting effi ciency increases. On the other hand, sin ce the electron mobility increases the c ut-off frequency increases. Thus, the de vice has high β, low resistance and shor t transit time in base region. The devic e simulation testifies the featuring of high output, high gain in low temperatur e, relative high gain in normal temperat ure and high cut-off frequency, which re presents the devices in ICs of the next generation.