脊形波导激光器中GaInP/AlGaInP选择蚀刻性的研究

Research of GaInP/AlGaInP Selective Wet Etching in 670 nm Ridge Waveguide Laser Diode

本文制做了 6 70 nm Ga In P/ Al Ga In P应变层单量子阱脊形波导激光器。为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30～ 5 0 nm的 Ga In P蚀刻阻挡层。用此种材料加工而成的腔长12 0 0 μm、宽 6 4μm的氧化条激光器的阈值电流密度为 340 A/ cm2。采用配比为 1.0∶ 2 .5的 HCl∶H2 O溶液对 Ga In P/ Al Ga In P进行湿蚀刻研究 。

nm GaInP/AlGaInP compressively strained SQW ridge waveguide laser diode was reported here.For further optimal process,a single GaInP etch stop layer with 30～50 nm thickness,which was inserted in the vertical structure of normal quantum well material,was verified.And the threshold current density of laser diode with cavity length of 1 200 μm and oxide stripe width of 64 μm,which was made of above material,was measured as 340 A/cm 2.The selective wet etching of GaInP/AlGaInP was experimentally researched with solution of HCl,ratio of 1.0∶2.5,and good results were got.