摘要
研究了干法反应刻蚀和湿法强碱化学腐蚀方法对场致发射阵列顶部的锐化问题以及不同工作气体的干法反应刻蚀和湿法化学腐蚀对场致发射阵列Si尖顶部的SiO2 绝缘层的去除方法 ,并对这两种方法进行了比较 ,给出了各自的优缺点。
The dry reative ion etching and wet strong alkali chemical etching to sharp the tips of field emitter array are studied. The methods to remove the SiO 2 insulator layer on the Si tips of field emitter array by RIE with different reactive gases or by wet chemical etching are discussed. The two methods are compared on their advantages and disadvatages.
出处
《微细加工技术》
2001年第3期14-17,共4页
Microfabrication Technology
