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用热灯丝辅助化学汽相沉积法在钼基板上沉积金刚石薄膜的研究

INVESTIGATION OF DEPOSITION OF DIAMOND THIN FILMS ON MOLYBDENUM SUBSTRATE BY HFACVD METHOD
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摘要 用热灯丝铺助化学汽相沉积(HFACVD)法,以H_2十CH_4为原料在钼基板上沉积出了金刚石膜。用扫描电镜,X射线衍射,激光Raman光谱和光荧光谱对所得金刚石膜进行了分析。实验结果表明,钼基板表面先生成了1层Mo_2C,然后,金刚石再在此Mo_2C上形核生长。所沉积的金刚石膜中仍含有一定的SP^2态碳和中性空缺等缺陷。 Diamond thin films were deposited on molybdenum substrate by Hot Filament Assisted Chemical Vapour Deposition(HFACVD) method in H2 plus CH4 mixture precursor. The obtained diamond thin films were then examined using SEM, XRD, Laser Raman Spectrum and PL spectrum. Experimental results showed that a layer of Mo2C was formed on molybdenum substrate at first and then diamond nucleated on that Mo2C layer. Nevertheless, Diamond thin films prepared by the authors contained some defects, such as sp2 carbon impurity and neutral vacancy etc.
出处 《北京矿冶研究总院学报》 1992年第1期89-92,共4页
关键词 金刚石膜 热灯丝化学汽相沉积 拉曼光谱 钼基板 HFACVD Diamond thin film HFACVD Raman spectrum
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