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碳化硅晶须生长机理的研究

INVESTIGATION OF THE GROWTH OF SILICON CARBIDE WHISKER
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摘要 用扫描电子显微镜对实验所制备样品进行形貌观察,用X衍射仪对样品进行了标定。结果表明,实验所得样品为β—SiC晶须。对SiC晶须的生成反应进行了热力学计算,并从动力学形核及晶体结构的角度分析了SiC晶须生长的机理。 A sample prepared in our experiment was investigated by SEM and X-ray Diffraction Analyses. The results show that the sample manufactured in the test is β-SiC whiskers. The reaction of preparing SiC whiskers was thermodynam-ically calculated. Experimental results indicate that the yield of SiC whiskers can be improved by adding appropriate catalyst in the reactant, and the quantity of SiC particles in the product can be decreased with furnance temperature rapidly passing the range of 1350~1450℃ during its variation. The mechanism of producing SiC whiskers was analyzed by means of dynamically coring and crystal structure. It is concluded that many crystal and non-crystal SiC cores are firstly formed, then crystal cores grow to be whiskers of the same diameter but non-crystal cores grow to non-crystal SiC particles.
出处 《北京矿冶研究总院学报》 1992年第2期58-61,共4页
关键词 晶须 生长机理 碳化硅 复合材料 SiC Whisker Mechanism of growth
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  • 1曹利,1989年
  • 2郭可信,高分辨电子显微学.在固体科学中的应用,1985年
  • 3张广荣,无机材料学报,1988年,3卷,1期,39页
  • 4Chang Shichang,J Am Ceram Soc,1984年,67卷,10期,691页
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