如何提高NTD硅单晶少子寿命

How Improving the Minority Carrier Lifetime of NTD Silicon Crystal

本文简要介绍了NTD硅单晶的退火工艺 ,通过在一次退火工艺和二次退火升τ工艺中 ,引入P2 O5,结果表明 :晶体表面的P2 O5保护层在晶体表面的吸除作用能引起晶体内缺陷和杂质的消失 。

In this article the annealing technology of NTD single silicon is introdued.In the first and second annealing technology P 2O 5is added,the results show that the absoption action of P 2O 5 protect layer on the crystal surface can cause the disappear of defects and impuity inter the crystal and can largely increase and improve the minority carrier lifetime and the τ qualified percentage of pass of silicon crystal.