P和In原子K壳层X光吸收对InP单晶表面的损伤增强作用

Damaging enhancement on Inp[l00] surface induced by K-shell photoionization absorption of phosphorus or indium

用两组能量围绕Ｐ和ＩｎＫ壳层结合能上下的同步辐射单色Ｘ光对ＩｎＰ单晶［１００］表面进行辐照。结果表明，无论Ｘ光子被Ｐ原子Ｋ壳层吸收还是被Ｉｎ原子Ｋ壳层吸收，ＩｎＰ单晶［１００］表面Ｐ原子芯能级２Ｐ电子态变化明显。Ｐ和Ｉｎ原子Ｋ壳层Ｘ光吸收对ＩｎＰ单晶表面辐射损伤增强因子分别为４．４ｘ１０－６ｋｇ／Ｃ和３．

InP[100] surface was irradiated by monochromatic synchrotron X-rays above (2.153 or 27.98keV) and below (2.140 or 27.85keV) the K-shell binding energy of phosphorus or indium. The experimental results showed that the shapes of XPS P2p. peak changed greatly whether the photon absorption occurred at K-shell of phosphorus or indium atom. The enhancement factors of K-shell absorption for P and In were 4.4 10^-6kg/C and 3.1 10^-5kg/C respectively.