H^(+)、N^(+)、Ar^(+)注入对啤酒酵母存活率的影响及SEM和ESR研究

Studies on the Biological Effects of Saccharomyces cerevisiae Implanted with H^(+)、N^(+)、Ar^(+)

研究了H+ 、N+ 、Ar+ 低能离子注入酵母菌剂量对存活率的影响 ;离子注入对酵母细胞的刻蚀损伤作用和离子注入后对细胞内自由基产生的影响。结果表明 :酵母的存活率随着注入剂量的增加而减少 ,离子注入对其存活率影响程度是H+ >N+ >Ar+ ,其半致死剂量分别是 2 .1× 10 1 4 ions cm2 ,5 .5× 10 1 4 ions cm2 ,6 .8× 10 1 4 ions cm2 。随着离子注入剂量的增加对酵母细胞的损伤和刻蚀作用逐渐增大 ,刻蚀损伤作用具有不均匀性 ;离子注入后酵母细胞内自由基产额明显增加 ,随着注入剂量的增大 ,自由基的强度也增大 。

The biological effects of saccharomyces cerevisiae implanted with low energy ion beams were studied with the method of Scanning Electron Microscope(SEM) and Electron Spin Resonance(ESR).The results were as following:(1) The survival rate of Sacharomyces cerevisiae was decreased gradually with the increase of implantation ion dose. The death degree of Saccharomyces cerevisiae implanted wih H +?N +?Ar + was H +>N +>Ar + and the Death Dose were 2.1×10 14 ?ions/cm 2,5.5×10 14 ?ions/cm 2,6.8×10 14 ?ions/cm 2;(2) The etching damage of Saccharomyces cerevisiae was aggravated with the increasing implantation ion dose;(3) The intensity of the free radicals signal was enlarged with enhancing implantation ion dose and then reached saturation in certain dose.