低强度半导体激光疗法对认知障碍病人脑功率和P_3PL的影响

EFFECTS OF LOW INTENSITY SEMICONDUCTOR LASER THERAPY ON THE EEG POWER SPECTRUM AND P3PL IN PATIENTS WITH COGNITIVE DISORDER

①目的 观察低强度半导体激光 (LISCL)疗法对认知障碍病人脑功率和事件相关电位P3 0 0 峰潜伏期(P3 PL)的影响。②方法 应用LISCL对 6 0例认知障碍病人进行治疗 ,分别于治疗前、治疗 5次和 10次后采用CFM 8便携式脑电监测仪和神经电检仪检测脑功率和P3 PL的变化。③结果 治疗前脑功率表现为额叶、颞叶及枕叶脑电慢波成分较多 ,异常的高功率含量区 (δ ,θ)值分别于治疗 5次和 10次后逐渐减少 ,额叶、颞叶底部及枕叶慢波指数降低 ,而α,β频段减少的功率含量值逐渐增高 ,表现为 (δ +θ) / (α +β)减小 ,与治疗前比较差异有显著意义(F =3.0 5～ 4.89,q =2 .83～ 6 .0 2 ,P <0 .0 5 ,0 .0 1) ;治疗 5次和 10次后的P3 PL与治疗前相比明显降低 (F =5 .0 3,q =6 .33,6 .2 0 ,P <0 .0 1)。

Objective To study the effects of low intensity semiconductor laser (LISCL) therapy on the EEG power spectrum and P300 peak latency (P3PL). Methods We used LISCL to treat 60 patients with cognitive disorder and detected the EEG power spectrum and P3PL using CMF 8 portable EEG monitoring instrument and NDI 200 neuroelectric detective and diagnostic instrument. Results The waves of (δ+θ) decreased and (α+β) increased significantly (F=3.05-4.89,q=2.83-6.02,P<0.05,0.01) after the treatment for 5 and 10 times; P3PL decreased greatly after 5 and 10 times treatment (F=5.03,q=6.33,6.20,P<0.01). Conclusion The LISCL could improve the brain functions and cognitive function of patients with cognitive disorder.