准分子激光烧结玻璃衬底上多晶硅薄膜材料的制备

Preparation of Polycrystalline Silicon Thin Films by Excimer-laser-annealing Method

在 PECVD法制备 a- Si:H薄膜材料基础上 ,以 Xe Cl准分子激光烧结为手段 ,对在玻璃衬底上制备多晶硅薄膜材料的工艺条件进行了探索 ,利用 XRD、 SEM、 Raman光谱等分析测试手段对所制备材料的结构特征进行了表征。较高的衬底温度、合适的激光能量密度和脉冲频率 ,有利于获得高质量的多晶硅薄膜。

Based on the a-Si∶H thin films deposited by PECVD method, the preparing technique of polycrystalline silicon thin films on glass substrate by XeCl excimer-laser-annealing method was investigated. The film structure was characterized by XRD, SEM and Raman spectrometry. It is shown that a high quality p-Si thin film can be get employing high substrate temperature, suitable laser energy density and pulse frequency.