摘要
利用质量分离的低能离子束沉积技术 ,得到了非晶碳膜 .所用离子能量为 5 0— 2 0 0eV ,衬底温度从室温到80 0℃ .在沉积的能量范围内 ,衬底为室温时薄膜为类金刚石 ,表面非常光滑 ;而 6 0 0℃下薄膜主要是石墨成分 ,表面粗糙 .沉积能量大于 140eV ,80 0℃时薄膜表面分立着高度取向的、垂直衬底表面、相互平行的开口碳管 .用高分辨电子显微镜看到了石墨平面的垂直择优取向 ,离子的浅注入和应力是这种优先取向的主要机理 .
Carbon films were deposited by mass-selected ion beam technique with ion energies 50—200eV at a substrate temperature from room temperature to 800℃. For the energies used, smooth diamond-like carbon films were deposited at room temperature. When the substrate temperature was 600℃,rough graphitic films were produced. But highly oriented carbon tubes were observed when the energies were larger than 140eV at 800℃. They were perpendicular to the surface and parallel to each other. Preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. Shallow ion implantation and stress are responsible for this orientation.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第7期1324-1327,共4页
Acta Physica Sinica