Sn在Cu(111)上欠电位沉积的现场STM研究

In-situ STM study of Sn UPD on Cu(111)electrode

本文用现场扫描隧道显微镜 (in situSTM)研究Sn在Cu( 1 1 1 )上的欠电位沉积 (underpotentialdepositionUPD)过程。实验结果表明 ,Sn原子在Cu( 1 1 1 )表面上的UPD首先在晶面的边缘处发生 ,随后向晶面的其余地方发展并取代吸附在表面的SO2 -4 ,这一过程伴随着显著的台阶轮廓的变化。在Sn的UPD层溶出过程中 ,台阶边缘形状发生了更剧烈的变化 ,并且观察到凹洞的出现 ,表明Sn与Cu( 1 1 1 )

The underpotential deposition(UPD)of Sn on Cu(111)has been investigated in H 2SO 4 solution using in situ scanning tunneling microscopy(STM). The experimental results indicated that UPD of Sn initializes at the edge of the terraces following the nucleation and growth model and grew towards to the center of the terraces until a submonolayer of Sn was formed. This process was accompanied by the change of the profile of the steps. Pits were observed at the surface after the dissolution of the UPD Sn indicating that the surface alloy has been formed between Cu and UPD Sn.