现场STM针尖诱导Ag(111)表面局域刻蚀

In-stiu STM tip-induced localized etching of Ag(111)

本文报道用现场扫描隧道显微镜技术 (in situSTM)研究Ag( 1 1 1 )电极表面局域刻蚀。实验表明 ,STM针尖可以诱导有Iˉ特性吸附的Ag( 1 1 1 )电极在其电化学稳定区发生表面局域刻蚀 ,刻蚀的发生与程度与针尖电位、样品电位及偏压等因素有紧密关系 ,刻蚀速度在偏压最小时达最大。

We reported STM tip induced localized etching of Ag(111)surface under electrochemical control. It has been shown that the induced etching by W tip can take place in the presence of I in alkaline solution at the potential where it is electrochemically stable without the tip involvement. The etching rate crucially depends on the tip electrode potential, which reaches maximum when bias voltage approaches zero. The influence of the tip materials, the tip potential as well as the sample potential was discussed, which indirectly indicate a multiple tunneling mechanism in the electrolyte.