非晶硅多层膜中氢的核反应分析研究

Study of Hydrogen in Multilayer Amorphons Silicon

本文利用8.42MeV窄共振核反应~1H(^(19)F,αv)^(16)O研究了辉光放电制备非晶硅多层膜中氢的深度分布、游动性及其随退火温度的关系。引进高斯分辨函数简化了数据处理过程,得到氢浓度随深度的分布情况,对氢污染及测氢标准进行了讨论。

The resonance reaction ~1H(^(18)F, αγ)^(16)O with energy 6.42 MeV wasused to determine the hydrogen contents, depth profiles and mobilities ofhydrogen containing films deposited on silicon wafers. We introduced aGaussian Resolution Function to simplify the convolution process which sused to obtain yield curves from the concentration distrbutions. We alsodiscussed the effects of hydrogen concentration on surfaces of samples andstandard samples in measurements.