摘要
通过建立基于耗尽层等效的准二维模型。模拟了异质结双极晶体管(HeterojuctionBipolarTransistorHBT)的热电耦合特性。在模型中,器件内的温度和少数载流子分布都采用传输线矩阵(TransmissionLineMatrix.TLM)法求得。计算结果表明该模型能有效、方便地分析器件的热电耦合特性,同时能减少对计算的时间占用和内存空间。
We present here an improved quasi two dimensional model incorporated of depletion-layer approximation to simulate electrothermal properties of HBT. In the model, the temperature profile and minority carrier distributions are numerically simulated by transmission line matrix (TLM) method. The results show that this model can conveniently simulate the electrothermal effects and efficiently reduce both the CPU time and memory space.
出处
《微波学报》
CSCD
北大核心
1998年第3期207-213,共7页
Journal of Microwaves