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平面磁控溅射薄膜厚度分布模拟 被引量:6

Film Thickness Distribution Simulation of Planar Magnetron Sputterin g
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摘要 磁控溅射法是制备薄膜的一种重要方法 ,薄膜厚度分布是影响薄膜性能的一个重要因素。本文根据平面磁控溅射的实际 ,提出了一个较为全面的磁控溅射薄膜厚度分布模型 ,该模型综合考虑靶面溅射电流分布、溅射产额与入射角之间的关系、靶面出射粒子的角分布、空间角以及粒子迁移过程中的碰撞等。对建立的模型进行了计算机模拟 ,模拟结果与实验结果较为一致。 Magnetron sputtering is a widely-used technique to deposit films. Thickness uniformity of film influences its properties greatly .. This paper present a comprehensive model of thickness distribution of film pr e pared by magnetron sputtering, which consider the sputtering current on the targ et, sputtering efficiency, spatial angle, collision during particle transportati on and etc. Computer simulation has been done according to the model, and the re sults are in good agreement with experiments.
机构地区 西北工业大学
出处 《机械科学与技术》 EI CSCD 北大核心 2001年第6期884-885,共2页 Mechanical Science and Technology for Aerospace Engineering
基金 国防"九五"预研 ( J12 .2 .8)资助项目 陕西省自然科学基金 ( 99C2 9)
关键词 磁控溅射 膜厚分布 计算机模拟 薄膜 Magnetron sputtering Film thickness distributi on Computer simulation
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参考文献6

  • 1A. Billard, et al. Attempted Modeling of Thickness and Chemical Heterogeneity in Coatings Prepared by d.c. Reactive Magnetron Sputtering[J]. Surface and Coatings Technology, 1993, 59:41~47
  • 2S.Swann. Films Thickness Distribution in Magnetron Spu-ttering [J]. Vacuum, 1988, 38 (8~10):791~794
  • 3宋建全,刘正堂,朱景芝,郑修麟.极板间距对反应溅射Ge_xC_(1-x)薄膜的影响[J].西北工业大学学报,1998,16(4):637-640. 被引量:3
  • 4A. E. Wendt, et al. Radiul Current Distribution at a Planar Magnetron Cathode[J]. J. Vac. Sci. Technol,1988,A6 (3):1827~1831
  • 5C. E. Wickersham. Crystallographic Target Affects in Mag-netron Sputtering[J]. J. Vac. Sci. Technol.,1987,A5 (4)
  • 6M. Shishkov, et al. Thickness Uniformity of Thin Films Deposited on a Flat Substrate By Sputtering of a Target with Rotate Symmetry [J]. Vacuum, 1991, 42 (15): 1005~1008

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