摘要
同步辐射光刻有希望代替传统光刻技术,用于0.25μm以下图形的超精细加工。本文叙述了它的原理、相关技术的开发现状和工艺应用。
Lithography using Synchrotron Radiation promises to take the place of the tradi-tional lithographty for the superfining of sub-quarter micron pattern. The principleand the development of the relative technology of SRL and its application are alsoreviewed in this paper.
出处
《量子电子学》
CSCD
1991年第3期291-297,共7页
关键词
同步辐射
光刻
集成电路
微细加工
x--ray lithography (XRL)
lithography using synchrotron radiation (SRL)
sub--quarter micron technology
