nipi多量子阱中类氢杂质基态和激发态束缚能

Hydrogenic-lmpurity Binding Energy in Ground And Excited States of Nipi Multiple-Quantum Wells

本文利用类氢有效质量理论,讨论了nipi-si有限深非方量子阱模型下掺杂超晶格材料中的浅杂质问题。并进一步计算了受主束缚能与库仑力中心位置的关系。这些结论在定性上与前人对GaAs/Ga_xAl_(1-x)As中浅杂质态的研究是完全符合的。

Based on the hydrogenic-effective mass theory (HEMT), this paper has discussed the problem of the shallow impurity in doping superlattices within finite unrectangular quantum-well model. Self-consistent calculations are performed for the acceptor binding energy to vary as a function of the position of the coulomb center. Impurity euvelope wave functions for some ground and exci-ted states have been plotted to find the extent of wave-function spreading in a superlattice period. The results of the present calculation are in qualitative agreement with all previous results obtained in GaAs/Ga_x Al_(1-x) As multiple-quantum wells.