摘要
应用真空蒸发技术制备 Cd Te薄膜 ,并借助于扫描电子显微镜 ( SEM)、扫描俄歇谱仪( AES)和 X射线衍射仪 ( XRD)对其微观结构进行分析 .主要研究了不同工艺条件、不同原子配比、以及不同掺杂浓度下制得的 Cd Te薄膜的结构、物相 ,研究结果表明 :以 Cd∶ Te=0 .9∶1原子配比制得的 Cd Te薄膜具有最佳的结晶度和组分计量比 ;掺杂会使 Cd Te薄膜的结构。
Microstructures of the CdTe thin films prepared by vacuum evaporation technique were reported by the scanning electron microscope(SEM), Auger electron spectroscopy(AES)and x ray diffraction(XRD). The influences of the structural properties were studied in different technology conditions,stoichiometric compositions and doped concentration, It has been found that the heat treatment effected the microstructure and the stoichiometric composition of the CdTe thin films,and the Indium doping effected the structural properties of the thin films.
出处
《内蒙古大学学报(自然科学版)》
CAS
CSCD
北大核心
2001年第5期508-512,共5页
Journal of Inner Mongolia University:Natural Science Edition