摘要
平面薄膜是ICF分解实验的重要靶型 .以半导体技术结合重掺杂自截止腐蚀制备厚度为 3— 4μm的Si平面薄膜 ,以热蒸发结合脱膜工艺制备Al平面薄膜 ,两者的表面粗糙度分别为 30nm和 10nm左右 ;进一步采用离子束刻蚀在平面薄膜的表面引入网格或条状图形 ,获得测量成像系统像传递函数的刻蚀膜 。
Thin foils are important targets used in inertial confinement fusion experiments. Thin silicon foils with a thickness of 3 to 4 micrometers and a surface roughness of several tens of nanometers were prepared by a semiconductor process together with a self-stopping etching process. Thin aluminum foils with thickness about 1 micron thick and with a surface roughness of about 10 nanometers were prepared by evaporation together with a foil removal process. Through an ion beam etching process, a checked or striped pattern was transferred to the surface of the thin silicon and aluminum foils, to produce the grating foils. The parameters of the ion beam etching process could be varied to control the pattern transfer precision.
出处
《物理》
CAS
北大核心
2001年第11期707-711,共5页
Physics
基金
国家"八六三"高技术计划惯性约束聚变领域资助项目