电子束在VO_2薄膜中引起的价态、相结构和光学性能的改变

Variations of valence state, phase-structure and optic properties of VO_2 thin films induced by electron irradiation

利用能量为 1 .7Me V,注量分别为 1 .2 5× 1 0 13 /cm2 ,1 .2 5× 1 0 14 /cm2 ,1 .2 5× 1 0 15/cm2 的电子束辐照 VO2 薄膜 ,采用 XPS,XRD等测试手段对电子辐照前后的样品进行分析 ,并研究了电子辐照对样品相变过程中光透射特性的影响。结果表明电子辐照引起 VO2 薄膜中 V离子出现价态变化现象 ,并使薄膜的 X射线衍射峰发生变化。电子辐照在样品中产生的这些变化显著改变了 VO2

Vanadium dioxide thin films have been irradiated by electron beam with energy of 1.7MeV and fluence of 1.25×10 13 /cm 2, 1.25×10 14 /cm 2, 1.25×10 15 /cm 2 respectively. Structure and V ion valence of the films have been studied by X-ray diffraction and X-ray photoelectron spectroscopy before and after electron irradiation, and their phase-transition properties have been characterized by optical transmittance analysis methods. The results show that the valence variation of V ion and the changes of XRD patterns of the irradiated samples have been detected, and the optical properties during phase-transition process have been changed obviously by electron irradiation.