一种用于16位A/D转换器的2μm CMOS工艺

A 2-μm CMOS Technology for 16-Bit Analog-to-Digital Converters

介绍了一种 CMOS 1 6位 A/D转换器的工艺技术。该技术采用 2μm硅栅自对准 CMOS工艺、全离子注入和快速热退火。并分别用 P阱和双阱工艺、多晶硅栅注砷和注 BF2 制作了电路样品。两种工艺均能满足 1 6位 A/D转换器的要求 ,但

A 2 μm CMOS technology for 16 bit analog to digital converters is presented. In this technology, all ion implantation and rapid thermal annealing are used. MOSFET's are made by using p well and twin well process, and As and BF 2 implanted poly Si gate, respectively. It is demonstrated that both of the two processes can satisfy the requirements of 16 bit A/D converters, but the sample using p well process has a faster conversion speed than that using twin well.