摘要
研究了 VLP/ CVD低温硅外延生长技术。利用自制的 VLP/ CVD设备 ,在低温条件下 ,成功地研制出晶格结构完好的硅同质结外延材料。扩展电阻、X射线衍射谱和电化学分布研究表明 ,在低温下 (T<80 0°C)应用 VLP/ CVD技术 ,可以生长结构完好的硅外延材料 ;
Low temperature silicon epitaxy by very low pressure chemical vapor deposition technique has been investigated in the paper. The very low pressure chemical vapor deposition system made by Nanjing Electronic Device Institute is used to grow Si epitaxial wafers. Silicon epitaxial layers with high crystalline perfection, very good electric property and abrupt dopant transitions have been obtained.
出处
《微电子学》
CAS
CSCD
北大核心
2001年第5期357-359,共3页
Microelectronics
关键词
低温外延
VLP/CVD
杂质分布
硅
半导体技术
Low temperature epitaxy
Very low pressure chemical vapor deposition (VLP/CVD)
Dopant transitions
Si
