摘要
以逆向设计为主导方向,对国外集成双运放NSC747原理电路进行了模拟分析,并与国内同类产品做了对比实验,设计出了改进型的LF747电路版图。
Taking the retrorse design method as a leading way, this paper makes simulation analysis for the principle circuit of the foreign integrated double operational amplifier NSC747. The experiments compared to the domestic same products are made, and the improved circuit layout LF747 is designed.
出处
《半导体技术》
CAS
CSCD
北大核心
2001年第8期24-26,共3页
Semiconductor Technology