增强腔在大失谐原子光刻中的应用

Application of Enhanced Cavity in Far Detuning Atom-lithography

对增强腔在大失谐光场原子光刻中的实现进行了详细的讨论 ,通过增强腔对激光光束的压缩和功率的增强可达到近共振原子光刻的要求。数值结果显示相对于近共振原子刻印结果 ,在增强腔下光束中心处沉积的原子条纹宽度将更细 ,为原子刻印提供了一种实现条纹精细度较高的新型方案。

An application of the enhanced cavity in far detuning atom-lithography has been discussed. By reducing the Guassian beam waist and increasing laser power in the cavity, the requirement for the near resonant atom-lithography can be met. The numerical result shows that the FMHW of the lines deposited on the substrate at the centre of the laser beam in far detuning atom-lithography is much less than that in near resonant atom-lithography under the same angle deviation. So the enhanced cavity provides an approach to the atom-lithography.